报告题目：Future Electronic Enabled by New Materials and Devices
邀请讲座人：Yang Chai 柴扬教授
时间：2019年6月13日 10:30
地点：材料科学与工程学院仲英楼第一会议室
简介：Prof. Yang Chai received his PhD degree from the Hong Kong University of Science and Technology in 2009. After he conducted his Postdoctoral studies at Stanford University and University of Illinois at Urbana & Champaign, he joined the Department of Applied Physics in the Hong Kong Polytechnic University in 2012. He is a recipient of RGC Early Career Award in 2014, the IEEE Distinguished Lecturer since 2016, and the Semiconductor Science and Technology Early Career Research Award in 2017. His current research interest includes low-dimensional material for electron devices.
摘要：As the Moore’s law is coming close to its end, the development of future semiconductor research requires low power and high performance nanoelectronics (More Moore) and diverse and multifunctional devices (More than Moore). It has been becoming inevitable to introduce new materials into the existing Si CMOS platform to augment the performance of transistor, interconnect and memory, and renovate the computing architecture to break the limit of von Neumann design. Two-dimensional (2D) layered semiconductors possess ultrathin body, atomic scale smoothness, dangling bond-free surface, reasonable good mobility, and sizable bandgap. In this talk, I will describe our efforts on 2D materials characterizations and devices. In addition, I will also show our recent works on optoelectronic memories.
