[Research] Density functional theory guided advances in phase-change materials and memories
Recently, researchers from CAMP-Nano have published a review article “Density functional theory guided advances in phase-change materials and memories” on MRS Bulletin (IF 5.66). The article is the first review paper on theoretical computations and phase change materials. Prof. Wei Zhang from CAMP-Nano is the first and the corresponding author of the paper, the collaborators include Prof. Evan Ma from CAMP-Nano, and four researchers from RWTH Aachen University, Dr. Volker. L. Deringer, Prof. Richard Dronskowski, Prof. Riccardo Mazzarello and Prof. Matthias Wuttig.
Chalcogenide phase change materials (PCM) are emerging electronic materials that have very important applications on data storage, memory devices, brain-like data processing, flexible displays, etc. PCM based random access memory (PRAM) has the great potentials and values to be commercialized. In the review article, the authors provided an overview about the applications of quantum mechanics based density functional theory (DFT) simulations on phase change data storage, outlined the DFT guided advances in PCM and PRAM. Moreover, they gave an outlook about future usage of DFT in PCM and other materials science fields.
The work obtained the support from “Young Talent Support Plan” of Xi’an Jiaotong University.
MRS Bulletin, 40, 856-869 (2015) Link
The working principle of PCM, the chemical compositions, and some PCM based electronics products.
