[2019-6-11]Lecture Prof. Yang Chai, Future Electronic Enabled by New Materials and Devices
Lecture: Future Electronic Enabled by New Materials and Devices
Speaker：Prof. Yang Chai
Time: 10:30am, June 13th, 2019
Location: No.1 meeting room, MSE New building
Bio：Prof. Yang Chai received his PhD degree from the Hong Kong University of Science and Technology in 2009. After he conducted his Postdoctoral studies at Stanford University and University of Illinois at Urbana & Champaign, he joined the Department of Applied Physics in the Hong Kong Polytechnic University in 2012. He is a recipient of RGC Early Career Award in 2014, the IEEE Distinguished Lecturer since 2016, and the Semiconductor Science and Technology Early Career Research Award in 2017. His current research interest includes low-dimensional material for electron devices.
Abstract：As the Moore’s law is coming close to its end, the development of future semiconductor research requires low power and high performance nanoelectronics (More Moore) and diverse and multifunctional devices (More than Moore). It has been becoming inevitable to introduce new materials into the existing Si CMOS platform to augment the performance of transistor, interconnect and memory, and renovate the computing architecture to break the limit of von Neumann design. Two-dimensional (2D) layered semiconductors possess ultrathin body, atomic scale smoothness, dangling bond-free surface, reasonable good mobility, and sizable bandgap. In this talk, I will describe our efforts on 2D materials characterizations and devices. In addition, I will also show our recent works on optoelectronic memories.
